Vishay SUM70060E-GE3 IGBT

Antal (1 rulle med 800 enheter)*

9 712,80 kr

(exkl. moms)

12 140,80 kr

(inkl. moms)

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800 +12,141 kr9 712,80 kr

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RS-artikelnummer:
180-7419
Tillv. art.nr:
SUM70060E-GE3
Tillverkare / varumärke:
Vishay
COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.6mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET

Applications


• AC/DC switch-mode power supplies
• Battery management
• DC/AC inverters
• DC/DC converters
• Lighting
• Motor drive switches
• Synchronous rectifier
• Uninterruptible power supplies

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