Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

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5 709,00 kr

(exkl. moms)

7 136,00 kr

(inkl. moms)

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RS-artikelnummer:
165-5613
Tillv. art.nr:
IGB10N60TATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

110 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.31 x 9.45 x 4.57mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

RoHS-status: Inte relevant

COO (Country of Origin):
CN

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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