IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole

Se alla IGBTs

Antal (1 enhet)*

203,06 kr

(exkl. moms)

253,82 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • 53 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
1 +203,06 kr

*vägledande pris

RS-artikelnummer:
125-8050
Tillv. art.nr:
IXXK100N60C3H1
Tillverkare / varumärke:
IXYS
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

IXYS

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

695 W

Package Type

TO-264

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

20 → 60kHz

Transistor Configuration

Single

Dimensions

20.3 x 5.3 x 26.6mm

Minimum Operating Temperature

-55 °C

Energy Rating

600mJ

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
PH

IGBT Discretes, IXYS



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

relaterade länkar