IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole
- RS-artikelnummer:
- 791-7416P
- Tillv. art.nr:
- IXGH48N60B3
- Tillverkare / varumärke:
- IXYS
Mängdrabatt möjlig
Antal 10 enheter (levereras i ett rör)*
787,90 kr
(exkl. moms)
984,90 kr
(inkl. moms)
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- 2 enhet(er) är redo att levereras
- Dessutom levereras 30 enhet(er) från den 18 februari 2026
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Enheter | Per enhet |
|---|---|
| 10 - 28 | 78,79 kr |
| 30 - 58 | 70,28 kr |
| 60 - 118 | 64,455 kr |
| 120 + | 58,52 kr |
*vägledande pris
- RS-artikelnummer:
- 791-7416P
- Tillv. art.nr:
- IXGH48N60B3
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 280 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 300 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 40kHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.3 x 21.46mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 280 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 300 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 40kHz | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.46mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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