Renesas N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP RJK6012DPP-E0#T2

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RS-artikelnummer:
121-6898
Tillv. art.nr:
RJK6012DPP-E0#T2
Tillverkare / varumärke:
Renesas Electronics
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Brand

Renesas Electronics

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

920 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Transistor Material

Si

Length

10.16mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

30 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.7mm

Height

15.87mm

Forward Diode Voltage

1.5V

COO (Country of Origin):
KR

N-Channel High Voltage MOSFETs 150V and Over, Renesas Electronics



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