Infineon IKQ150N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 150 A 650 V, 3-Pin PG-TO247-3-PLUS-N,

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RS-artikelnummer:
284-991
Tillv. art.nr:
IKQ150N65EH7XKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

621 W

Number of Transistors

1

Package Type

PG-TO247-3-PLUS-N

Configuration

Single Collector, Single Emitter, Single Gate

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

The Infineon IGBT exemplifies cutting edge performance with its high speed and low saturation voltage design, tailored for demanding applications across various sectors. This product leverages the advanced trench stop IGBT7 technology, achieving remarkable efficiency at 650 V. Its copacked structure with a soft, fast recovery Emitter Controlled 7 diode ensures exceptional reliability and integrated circuit performance. Ideal for industrial UPS systems and electric vehicle charging stations Designed with humidity robustness in mind, the product offers enhanced durability in challenging environments.

Provides low switching losses for efficiency
Delivers low collector emitter saturation voltage
Optimized for hard switching applications
Ensures humidity robustness for reliability
Offers a range of products and PSpice models
Qualified for industrial applications and rigorous standards

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