Vishay, IGBT, Typ P Kanal, 8 Ben, PowerPAK 1212-8 Yta

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RS-artikelnummer:
180-7308
Tillv. art.nr:
SI7121ADN-T1-GE3
Tillverkare / varumärke:
Vishay
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Varumärke

Vishay

Produkttyp

IGBT

Maximal effektförlust Pd

27.8W

Kapseltyp

PowerPAK 1212-8

Fästetyp

Yta

Kanaltyp

Typ P

Antal ben

8

Maximal spänning för gate-emitter VGEO

25 V

Minsta arbetsstemperatur

50°C

Maximal arbetstemperatur

150°C

Längd

3.61mm

Standarder/godkännanden

RoHS

Bredd

3.61 mm

Höjd

1.12mm

Energimärkning

9.8mJ

Fordonsstandard

Nej

COO (ursprungsland):
CN

Vishay MOSFET


The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 25V. It has a drain-source resistance of 15mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 27.8W and continuous drain current of 18A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. With the help of this MOSFET, excellent performance and efficiency can be achieved at lower costs. The MOSFET offers excellent efficiency along with long productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Low thermal resistance powerpak package with small size

• Maximum dissipation power is 27.8W

• Operating temperature ranges between -50°C and 150°C

• TrenchFET power MOSFET

Applications


• Mobile computing

• Adaptor switches

• Load switches - Battery management

• Notebook computers

• Power management

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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