onsemi NCV57201DR2G, IGBT 2, 1.9 A 8-Pin 20 V, SOIC
- RS-artikelnummer:
- 221-6668
- Tillv. art.nr:
- NCV57201DR2G
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
55,66 kr
(exkl. moms)
69,575 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 11,132 kr | 55,66 kr |
| 50 - 95 | 9,588 kr | 47,94 kr |
| 100 - 495 | 8,31 kr | 41,55 kr |
| 500 - 995 | 7,302 kr | 36,51 kr |
| 1000 + | 6,988 kr | 34,94 kr |
*vägledande pris
- RS-artikelnummer:
- 221-6668
- Tillv. art.nr:
- NCV57201DR2G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT Module | |
| Output Current | 1.9A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Driver Type | IGBT | |
| Number of Outputs | 2 | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Height | 1.75mm | |
| Length | 5mm | |
| Width | 4 mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT Module | ||
Output Current 1.9A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Driver Type IGBT | ||
Number of Outputs 2 | ||
Rise Time 13ns | ||
Minimum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Height 1.75mm | ||
Length 5mm | ||
Width 4 mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCx57201 is a high voltage gate driver with one non−isolated low side gate driver and one galvanically isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. It isolated high side driver can be powered with an isolated power supply or with bootstrap technique from the low side power supply. The galvanic isolation for the high side gate driver guarantees reliable switching in high power applications for IGBTs that operate up to 800 V, at high dv/dt.
Matched propagation delay 90 ns
Built−in 20 ns minimum pulse width filter
Non−inverting output signal
CMTI up to 100 kV/s
Reliable operation for VS negative swing to −800 V