onsemi NCD57201DR2G, IGBT, 1.9 A 8-Pin 20 V, SOIC
- RS-artikelnummer:
- 221-6602
- Tillv. art.nr:
- NCD57201DR2G
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
150,98 kr
(exkl. moms)
188,72 kr
(inkl. moms)
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- Dessutom levereras 2 470 enhet(er) från den 23 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 15,098 kr | 150,98 kr |
| 100 - 240 | 13,014 kr | 130,14 kr |
| 250 - 490 | 11,278 kr | 112,78 kr |
| 500 - 990 | 9,923 kr | 99,23 kr |
| 1000 + | 9,016 kr | 90,16 kr |
*vägledande pris
- RS-artikelnummer:
- 221-6602
- Tillv. art.nr:
- NCD57201DR2G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT Module | |
| Output Current | 1.9A | |
| Pin Count | 8 | |
| Fall Time | 8ns | |
| Package Type | SOIC | |
| Number of Outputs | 2 | |
| Driver Type | IGBT | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 5mm | |
| Height | 1.75mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT Module | ||
Output Current 1.9A | ||
Pin Count 8 | ||
Fall Time 8ns | ||
Package Type SOIC | ||
Number of Outputs 2 | ||
Driver Type IGBT | ||
Rise Time 13ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Length 5mm | ||
Height 1.75mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCx57201 is a high voltage gate driver with one non−isolated low side gate driver and one galvanic ally isolated high or low side gate driver. It ca directly drive two IGBTs in a half bridge configuration. It isolated high side driver can be powered with an isolated power supply or with bootstrap technique from the low side power supply.
Low output voltage drop for enhanced IGBT conduction
Floating channel for bootstrap operation up to +800 V
CMTI up to 100 kV/s
Reliable operation for VS negative swing to −800 V