onsemi NCV57200DR2G Gate Driver 2, 1.9 A 8-Pin 20 V, SOIC
- RS-artikelnummer:
- 205-2421
- Tillv. art.nr:
- NCV57200DR2G
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
107,43 kr
(exkl. moms)
134,29 kr
(inkl. moms)
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- Dessutom levereras 3 160 enhet(er) från den 23 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 21,486 kr | 107,43 kr |
| 50 - 95 | 18,512 kr | 92,56 kr |
| 100 - 495 | 16,056 kr | 80,28 kr |
| 500 - 995 | 14,102 kr | 70,51 kr |
| 1000 + | 12,83 kr | 64,15 kr |
*vägledande pris
- RS-artikelnummer:
- 205-2421
- Tillv. art.nr:
- NCV57200DR2G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | General Purpose Driver | |
| Output Current | 1.9A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 8ns | |
| Number of Outputs | 2 | |
| Driver Type | General Purpose | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.75mm | |
| Width | 4 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type General Purpose Driver | ||
Output Current 1.9A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 8ns | ||
Number of Outputs 2 | ||
Driver Type General Purpose | ||
Rise Time 13ns | ||
Minimum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 1.75mm | ||
Width 4 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor high voltage gate driver with one non-isolated low side gate driver and one galvanic isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. An isolated high side driver can be powered with an isolated power supply or with Bootstrap technique from the low side power supply. This galvanic isolation for the high side gate driver guarantees reliable switching in high power applications for IGBTs that operate up to 800 V, at high dv/dt.
Package is SOIC-8 (Pb-Free)
High peak current output (+1.9A/-2.3A)
Low output voltage drop for enhanced IGBT conduction
Secured output low state without VDD/VB
Floating channel for Bootstrap operation up to +800V
CMTI up to 50kV/s
Reliable operation for VS negative swing to -800V
VDD & VBS supply range up to 20V