Renesas Electronics Halvbrygga, Gate-drivarmodul 2, 2 A, 8 Ben 14 V dc, SOIC

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95,29 kr

(exkl. moms)

119,112 kr

(inkl. moms)

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2 - 847,645 kr95,29 kr
10 - 1842,84 kr85,68 kr
20 - 9841,89 kr83,78 kr
100 - 19835,00 kr70,00 kr
200 +34,27 kr68,54 kr

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Förpackningsalternativ:
RS-artikelnummer:
256-1548
Tillv. art.nr:
HIP2100IBZT7A
Tillverkare / varumärke:
Renesas Electronics
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Varumärke

Renesas Electronics

Produkttyp

Gate-drivarmodul

Utström

2A

Antal ben

8

Kapseltyp

SOIC

Falltid

10ns

Typ av drivsteg

Halvbrygga

Antal utgångar

2

Stigtid

10ns

Minsta matningsspänning

9V

Antal drivare

2

Maximal matningsspänning

14V dc

Minsta arbetsstemperatur

-40°C

Maximal arbetstemperatur

125°C

Serie

HIP2100

Höjd

1.75mm

Bredd

4 mm

Standarder/godkännanden

No

Längd

5mm

Fästetyp

Styrelsen

Fordonsstandard

Nej

The Renesas half bridge driver is a high frequency, 100V half bridge N-channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under voltage of the high-side supply.

Drives N-channel MOSFET half bridge

Pb-free (RoHS compliant)

Bootstrap supply max voltage to 114VDC

On-chip 1Ω bootstrap diode

Fast propagation times for multi-MHz circuits

Drives 1000pF load with rise and fall times typ of 10ns

CMOS input thresholds for improved noise immunity

Low Power Consumption

Wide Supply Range

Supply Under voltage Protection

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