Alliance Memory, Parallell NAND 2 GB Flash-minne, 25 μs, 63 Ben, FBGA

The Alliance Memory 2Gb SLC Parallel NAND Flash features an x8-bit I/O interface and operates at a 3.3V Vcc power supply. Designed with cost-effectiveness in mind, its NAND cell structure offers an efficient solution for solid-state mass storage. The memory is divided into independently erasable blocks, allowing valid data to be preserved while old data is erased. Commands, data, and addresses are synchronously introduced using CE, WE, RE, ALE, and CLE input pins. An on-chip Program/Erase Controller automates all programming and erasing operations, including pulse repetition, internal verification, and data margining. Modify operations can be secured using the WP input to prevent unintended changes.

Copy back program doing fast data copy without external buffering