Winbond SLC NAND 2 GB Parallel Flash Memory 63-Pin VFBGA

Mängdrabatt möjlig

Antal 10 enheter (levereras på en bricka)*

758,80 kr

(exkl. moms)

948,50 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • 630 enhet(er) levereras från den 16 april 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
10 - 1875,88 kr
20 - 4873,865 kr
50 - 9871,96 kr
100 +70,225 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
188-2808P
Tillv. art.nr:
W29N02GVBIAA
Tillverkare / varumärke:
Winbond
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Winbond

Memory Size

2GB

Product Type

Flash Memory

Interface Type

Parallel

Package Type

VFBGA

Pin Count

63

Organisation

256M x 8 Bit

Mount Type

Surface

Cell Type

SLC NAND

Maximum Supply Voltage

3.6V

Minimum Supply Voltage

2.7V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Height

0.6mm

Width

9.1 mm

Length

11.1mm

Standards/Approvals

No

Number of Words

256M

Automotive Standard

No

Maximum Random Access Time

25μs

Supply Current

35mA

Number of Bits per Word

8

Series

W29N02GV

COO (Country of Origin):
TW
Density : 2Gbit (Single chip solution)

Vcc : 2.7V to 3.6V

Bus width : x8

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 2G-bit/256M-byte

Page size

2,112 bytes (2048 + 64 bytes)

Block size

64 pages (128K + 4K bytes)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(2)

10-years data retention

Command set

Standard NAND command set

Additional command support

Sequential Cache Read

Random Cache Read

Cache Program

Copy Back

Two-plane operation

Contact Winbond for OTP feature

Contact Winbond for block Lock feature

Lowest power consumption

Read: 25mA(typ.3V)

Program/Erase: 25mA(typ.3V)

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

63-ball VFBGA

2Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Support OTP Memory Area

Relaterade länkar