Winbond SLC NAND 4 GB Parallel Flash Memory 63-Pin VFBGA

RS-artikelnummer:: 188-2878P
Tillv. art.nr:: W29N04GVBIAF
Tillverkare / varumärke:: Winbond

Winbond SLC NAND 4 GB Parallel Flash Memory 63-Pin VFBGA

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Antal 10 enheter (levereras på en bricka)*

1 234,20 kr

(exkl. moms)

1 542,80 kr

(inkl. moms)

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Enheter	Per enhet
10 - 24	123,42 kr
25 - 49	120,06 kr
50 - 99	117,04 kr
100 +	114,13 kr

*vägledande pris

RS-artikelnummer:: 188-2878P
Tillv. art.nr:: W29N04GVBIAF
Tillverkare / varumärke:: Winbond

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Winbond
	Product Type	Flash Memory
	Memory Size	4GB
	Interface Type	Parallel
	Package Type	VFBGA
	Pin Count	63
	Organisation	512M x 8 Bit
	Mount Type	Surface
	Cell Type	SLC NAND
	Minimum Supply Voltage	2.7V
	Maximum Supply Voltage	3.6V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Height	0.6mm
	Width	11.1 mm
	Length	11.1mm
	Standards/Approvals	No
	Number of Bits per Word	8
	Maximum Random Access Time	25μs
	Supply Current	35mA
	Number of Words	512M
	Automotive Standard	No
	Series	W29N04GV

	Välj alla
	Brand Winbond
	Product Type Flash Memory
	Memory Size 4GB
	Interface Type Parallel
	Package Type VFBGA
	Pin Count 63
	Organisation 512M x 8 Bit
	Mount Type Surface
	Cell Type SLC NAND
	Minimum Supply Voltage 2.7V
	Maximum Supply Voltage 3.6V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Height 0.6mm
	Width 11.1 mm
	Length 11.1mm
	Standards/Approvals No
	Number of Bits per Word 8
	Maximum Random Access Time 25μs
	Supply Current 35mA
	Number of Words 512M
	Automotive Standard No
	Series W29N04GV

Datasheet W29N04GVBIAF

COO (Country of Origin):: TW

Density : 4Gbit (Single chip solution)

Vcc : 2.7V to 3.6V

Bus width : x8

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 4G-bit/512M-byte

Page size

2,112 bytes (2048 + 64 bytes)

Block size

64 pages (128K + 4K bytes)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command set

Additional command support

Sequential Cache Read

Random Cache Read

Cache Program

Copy Back

Two-plane operation

Contact Winbond for OTP feature

Contact Winbond for Block Lock feature

Lowest power consumption

Read: 25mA(typ.)

Program/Erase: 25mA(typ.)

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

63-ball VFBGA

4Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Support OTP Memory Area

Winbond SLC NAND 4 GB Parallel Flash Memory 63-Pin VFBGA

GRATIS leverans för online beställningar över 500,00 kr

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