ROHM Effektswitch IC, 46 Ben Lastväxlare Hög sida VQFN046V8080

The ROHM 650 V GaN HEMT Power Stage integrates a silicon driver within original package, significantly reducing parasitic inductance compared to traditional discrete solutions. It delivers a high switching slew rate of up to 150 V/ns, with adjustable gate drive strength to minimize EMI. Built-in protections and additional features help optimize cost and reduce PCB size. Designed for compatibility with major existing controllers, it serves as an efficient replacement for traditional discrete power switches such as super junction MOSFETs.

Wide operating range for VDD pin voltage