Microchip AT28HC256-12JU, 256 kB Parallel EEPROM, 120 ns 32-Pin PLCC Parallel

Bulk discount available

Subtotal (1 unit)*

119,62 kr

(exc. VAT)

149,52 kr

(inc. VAT)

Add to Basket
Select or type quantity
Tillfälligt slut
  • 18 enhet(er) levereras från den 22 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Units
Per unit
1 - 24119,62 kr
25 - 99115,81 kr
100 +111,78 kr

*price indicative

Packaging Options:
RS Stock No.:
177-1707
Mfr. Part No.:
AT28HC256-12JU
Brand:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Product Type

Parallel EEPROM

Memory Size

256kB

Interface Type

Parallel

Package Type

PLCC

Mount Type

Surface

Pin Count

32

Organisation

32K x 8 Bit

Maximum Clock Frequency

5MHz

Minimum Supply Voltage

4.5V

Number of Bits per Word

8

Maximum Supply Voltage

5.5V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Width

15 mm

Series

AT28HC256

Height

3.5mm

Length

12.5mm

Standards/Approvals

No

Data Retention

10year

Maximum Random Access Time

120ns

Supply Current

80mA

Automotive Standard

No

Number of Words

32768

COO (Country of Origin):
TW
The Microchip AT28HC256 is a high-performance 256Kbit Parallel EEPROM available in both Industrial and Military temp ranges, offering access times to 70ns with power dissipation of 440mW. Deselected, CMOS standby current is less than 5mA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Features an internal Error Correction Circuit for extended endurance and improved data retention, in Military version. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.

Additional Features:

32 Kbits x 8 (256 Kbit)

5V ± 10% Supply

Parallel Interface

150ns access time

self-Timed Erase and Write Cycles (10 ms max)

Page Write and Byte Write

Data Polling for end of write detection

Low Power Consumption:

Read / Write current 40 mA (Max)

Standby current TTL 2 mA (Max), CMOS 200 μA (Max)

Related links