Microchip, 256 kB Parallel EEPROM, 120 ns 32-Pin PLCC Parallel

Mängdrabatt möjlig

Antal (1 rör med 32 enheter)*

3 690,048 kr

(exkl. moms)

4 612,544 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 20 juli 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rör*
32 - 96115,314 kr3 690,05 kr
128 +112,434 kr3 597,89 kr

*vägledande pris

RS-artikelnummer:
177-1458
Tillv. art.nr:
AT28HC256-12JU
Tillverkare / varumärke:
Microchip
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Microchip

Memory Size

256kB

Product Type

Parallel EEPROM

Interface Type

Parallel

Package Type

PLCC

Mount Type

Surface

Pin Count

32

Maximum Clock Frequency

5MHz

Organisation

32K x 8 Bit

Minimum Supply Voltage

4.5V

Number of Bits per Word

8

Maximum Supply Voltage

5.5V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Length

12.5mm

Height

3.5mm

Series

AT28HC256

Standards/Approvals

No

Width

15 mm

Data Retention

10year

Supply Current

80mA

Automotive Standard

No

Number of Words

32768

Maximum Random Access Time

120ns

COO (ursprungsland):
TW
The Microchip AT28HC256 is a high-performance 256Kbit Parallel EEPROM available in both Industrial and Military temp ranges, offering access times to 70ns with power dissipation of 440mW. Deselected, CMOS standby current is less than 5mA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Features an internal Error Correction Circuit for extended endurance and improved data retention, in Military version. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.

Additional Features:

32 Kbits x 8 (256 Kbit)

5V ± 10% Supply

Parallel Interface

150ns access time

self-Timed Erase and Write Cycles (10 ms max)

Page Write and Byte Write

Data Polling for end of write detection

Low Power Consumption:

Read / Write current 40 mA (Max)

Standby current TTL 2 mA (Max), CMOS 200 μA (Max)

relaterade länkar