Renesas Electronics SRAM-minne, 1 MB

The Renesas Electronics asynchronous static RAM is 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs. It has an output enable pin which operates as fast as 5 ns, with address access times as fast as 10ns. All bidirectional inputs and outputs of the this product are LVTTL compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. It is packaged in a JEDEC standard 44-pin Plastic SOJ, a 44-pin TSOP Type II, and a 48-ball plastic 7 x 7 mm FBGA.

64K x 16 Advanced high-speed CMOS Static RAM