Alliance Memory SRAM, AS7C34098A-10TIN- 4Mbit
- RS-artikelnummer:
- 230-8469
- Tillv. art.nr:
- AS7C34098A-10TIN
- Tillverkare / varumärke:
- Alliance Memory
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Antal (1 förpackning med 2 enheter)*
113,68 kr
(exkl. moms)
142,10 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 56,84 kr | 113,68 kr |
| 10 - 18 | 51,80 kr | 103,60 kr |
| 20 - 48 | 50,79 kr | 101,58 kr |
| 50 - 98 | 50,40 kr | 100,80 kr |
| 100 + | 45,415 kr | 90,83 kr |
*vägledande pris
- RS-artikelnummer:
- 230-8469
- Tillv. art.nr:
- AS7C34098A-10TIN
- Tillverkare / varumärke:
- Alliance Memory
Specifikationer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Alliance Memory | |
| Memory Size | 4Mbit | |
| Organisation | 256K x 16 | |
| Number of Words | 262144 | |
| Number of Bits per Word | 16bit | |
| Maximum Random Access Time | 55ns | |
| Low Power | Yes | |
| Timing Type | Asynchronous | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP-44 | |
| Pin Count | 44 | |
| Dimensions | 18.52 x 10.26 x 1.05mm | |
| Height | 1.05mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Maximum Operating Temperature | +85 °C | |
| Length | 18.6mm | |
| Width | 10.3mm | |
| Minimum Operating Supply Voltage | 3 V | |
| Minimum Operating Temperature | -40 °C | |
| Välj alla | ||
|---|---|---|
Brand Alliance Memory | ||
Memory Size 4Mbit | ||
Organisation 256K x 16 | ||
Number of Words 262144 | ||
Number of Bits per Word 16bit | ||
Maximum Random Access Time 55ns | ||
Low Power Yes | ||
Timing Type Asynchronous | ||
Mounting Type Surface Mount | ||
Package Type TSOP-44 | ||
Pin Count 44 | ||
Dimensions 18.52 x 10.26 x 1.05mm | ||
Height 1.05mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Length 18.6mm | ||
Width 10.3mm | ||
Minimum Operating Supply Voltage 3 V | ||
Minimum Operating Temperature -40 °C | ||
The Alliance Memory AS7C34098A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words x 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 4/5/6/7 ns are ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems.
Easy memory expansion with CE, OE inputs
TTL- and CMOS-compatible, three-state I/O
TTL- and CMOS-compatible, three-state I/O
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