Infineon SRAM Memory Chip, CY7C1049GN-10VXI- 4Mbit

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1 344,972 kr

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1 681,215 kr

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RS-artikelnummer:
182-3295
Tillv. art.nr:
CY7C1049GN-10VXI
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Memory Size

4Mbit

Organisation

512k x 16 bit

Number of Words

512k

Number of Bits per Word

8bit

Maximum Random Access Time

10ns

Clock Frequency

100MHz

Timing Type

Asynchronous

Mounting Type

Surface Mount

Package Type

SOJ

Pin Count

36

Dimensions

0.93 x 0.4 x 0.12mm

Height

0.12mm

Maximum Operating Supply Voltage

5.5 V

Minimum Operating Supply Voltage

4.5 V

Minimum Operating Temperature

-40 °C

Width

0.4mm

Length

0.93mm

Maximum Operating Temperature

+85 °C

COO (Country of Origin):
US
CY7C1049GN is a high-performance CMOS fast static RAM device organized as 512K words by 8-bits. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0 through I/O7 and address on A0 through A18 pins. Data reads are performed by asserting the Chip Enable (CE) and Output Enable (OE) inputs LOW and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O7). All I/Os (I/O0 through I/O7) are placed in a high-impedance state during the following events: The device is deselected (CE HIGH) The control signal OE is de-asserted.

High speed
tAA = 10 ns
Low active and standby currents
Active current: ICC = 38 mA typical
Standby current: ISB2 = 6 mA typical
Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and
4.5 V to 5.5 V
1.0 V data retention
TTL-compatible inputs and outputs
Pb-free 36-pin SOJ and 44-pin TSOP II packages

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