Infineon 650 V 20 A Rectifier & Schottky Diode 3-Pin PG-TO-247
- RS-artikelnummer:
- 258-0979
- Tillv. art.nr:
- IDW40G65C5BXKSA2
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 30 enheter)*
2 479,68 kr
(exkl. moms)
3 099,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 02 juni 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 30 | 82,656 kr | 2 479,68 kr |
| 60 - 60 | 78,527 kr | 2 355,81 kr |
| 90 + | 75,219 kr | 2 256,57 kr |
*vägledande pris
- RS-artikelnummer:
- 258-0979
- Tillv. art.nr:
- IDW40G65C5BXKSA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | PG-TO-247 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDW40G65C5B | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 210μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1) for target applications | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type PG-TO-247 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDW40G65C5B | ||
Pin Count 3 | ||
Peak Reverse Current Ir 210μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1) for target applications | ||
Automotive Standard No | ||
The Infineon ThinQ generation 5 represents leading edge technology for the SiC Schottky barrier diodes. Thanks to the more compact design and thin wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ Generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
High surge current capability
Higher system reliability due to lower operating temperatures
Reduced EMI
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