Infineon 1200 V 16 A Industrial Power Control Diode Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode 2-Pin
- RS-artikelnummer:
- 249-6929
- Tillv. art.nr:
- IDH16G120C5XKSA1
- Tillverkare / varumärke:
- Infineon
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63,17 kr
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78,96 kr
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 63,17 kr |
| 10 - 24 | 60,03 kr |
| 25 - 49 | 57,57 kr |
| 50 - 99 | 54,99 kr |
| 100 + | 51,18 kr |
*vägledande pris
- RS-artikelnummer:
- 249-6929
- Tillv. art.nr:
- IDH16G120C5XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Industrial Power Control Diode Silicon Carbide Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | PG-TO-220 | |
| Maximum Continuous Forward Current If | 16A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | IDH16G120C5 | |
| Diode Configuration | Single | |
| Rectifier Type | Silicon Carbide Schottky Diode | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 410μA | |
| Maximum Forward Voltage Vf | 2.85V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Industrial Power Control Diode Silicon Carbide Schottky Diode | ||
Mount Type Through Hole | ||
Package Type PG-TO-220 | ||
Maximum Continuous Forward Current If 16A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series IDH16G120C5 | ||
Diode Configuration Single | ||
Rectifier Type Silicon Carbide Schottky Diode | ||
Pin Count 2 | ||
Peak Reverse Current Ir 410μA | ||
Maximum Forward Voltage Vf 2.85V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide material. It does not have reverse recovery current and forward recovery. It has temperature independent switching behaviour. Low forward voltage even at high operating temperature. It has tight forward voltage distribution and excellent thermal performance. It has extended surge current capability.
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size / cost savings due to reduced hea tsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
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