STMicroelectronics 1200 V 10 A Diode 2-Pin D2PAK
- RS-artikelnummer:
- 219-4233
- Tillv. art.nr:
- STPSC10H12G2Y-TR
- Tillverkare / varumärke:
- STMicroelectronics
Antal (1 rulle med 1000 enheter)*
44 506,00 kr
(exkl. moms)
55 632,00 kr
(inkl. moms)
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 1000 + | 44,506 kr | 44 506,00 kr |
*vägledande pris
- RS-artikelnummer:
- 219-4233
- Tillv. art.nr:
- STPSC10H12G2Y-TR
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | STPSC10H12G2Y-TR | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 30μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 60A | |
| Maximum Forward Voltage Vf | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.95mm | |
| Width | 10.4 mm | |
| Height | 4.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series STPSC10H12G2Y-TR | ||
Pin Count 2 | ||
Peak Reverse Current Ir 30μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 60A | ||
Maximum Forward Voltage Vf 2.25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.95mm | ||
Width 10.4 mm | ||
Height 4.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics 10 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1. The STPSC10H12G2Y-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
AEC-Q101 qualified
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
PPAP capable
Operating Tj from -40 °C to 175 °C
Low VF
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