Infineon 650 V 12 A Schottky Barrier Diode Schottky 2-Pin TO-220
- RS-artikelnummer:
- 216-8387
- Tillv. art.nr:
- IDH12G65C6XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
1 162,55 kr
(exkl. moms)
1 453,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 400 enhet(er) från den 29 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 23,251 kr | 1 162,55 kr |
| 100 - 200 | 21,392 kr | 1 069,60 kr |
| 250 + | 20,673 kr | 1 033,65 kr |
*vägledande pris
- RS-artikelnummer:
- 216-8387
- Tillv. art.nr:
- IDH12G65C6XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Schottky Barrier Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDH12G65C6 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.25V | |
| Peak Reverse Current Ir | 92μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 64A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 29.95mm | |
| Width | 4.5 mm | |
| Length | 10.2mm | |
| Standards/Approvals | JEDEC (J-STD20 and JESD22) | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Mount Type Through Hole | ||
Product Type Schottky Barrier Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDH12G65C6 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.25V | ||
Peak Reverse Current Ir 92μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 64A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 29.95mm | ||
Width 4.5 mm | ||
Length 10.2mm | ||
Standards/Approvals JEDEC (J-STD20 and JESD22) | ||
Automotive Standard No | ||
The Infineon CoolSiC generation 5 offers a new leading edge technology for the schottky barrier diode with current rating of 12 A. This latest generation is suitable for use in telecom SMPS and high-end servers, UPS systems, motor drives, solar inverters as well as PC silver box and lighting applications.
Best-in-class figure of merit
No reverse recovery charge
Temperature independent switching behaviour
High dv/dt ruggedness
Optimized thermal behaviour
Relaterade länkar
- Infineon 650 V 12 A Schottky Barrier Diode Schottky 2-Pin TO-220 IDH12G65C6XKSA1
- Infineon 650 V 41 A Schottky Barrier Diode Schottky TO-220
- Infineon 650 V 41 A Schottky Barrier Diode Schottky TO-220 IDH20G65C6XKSA1
- Infineon 650 V 10 A Schottky Barrier Diode Schottky 2-Pin TO-220
- Infineon 650 V 8 A Schottky Barrier Diode Schottky 2-Pin TO-220
- Infineon 650 V 8 A Schottky Barrier Diode Schottky 2-Pin TO-220 IDH08G65C6XKSA1
- Infineon 650 V 10 A Schottky Barrier Diode Schottky 2-Pin TO-220 IDH10G65C6XKSA1
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220
