STMicroelectronics 650 V 12 A Diode 2-Pin TO-220
- RS-artikelnummer:
- 201-0888
- Tillv. art.nr:
- STPSC12065D
- Tillverkare / varumärke:
- STMicroelectronics
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1 229,75 kr
(exkl. moms)
1 537,20 kr
(inkl. moms)
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 24,595 kr | 1 229,75 kr |
| 100 - 200 | 23,464 kr | 1 173,20 kr |
| 250 - 450 | 22,848 kr | 1 142,40 kr |
| 500 - 950 | 22,259 kr | 1 112,95 kr |
| 1000 + | 21,692 kr | 1 084,60 kr |
*vägledande pris
- RS-artikelnummer:
- 201-0888
- Tillv. art.nr:
- STPSC12065D
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC12065 | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 50μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 220A | |
| Maximum Forward Voltage Vf | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.95mm | |
| Width | 10.98 mm | |
| Height | 4.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC12065 | ||
Pin Count 2 | ||
Peak Reverse Current Ir 50μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 220A | ||
Maximum Forward Voltage Vf 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.95mm | ||
Width 10.98 mm | ||
Height 4.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics 650V power schottky silicon carbide diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases.
No or negligible reverse recovery
Switching behaviour independent of temperature
High forward surge capability
Operating Tj from -40 °C to 175 °C
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