STMicroelectronics 650 V 8 A Diode 2-Pin TO-220 STPSC8065D
- RS-artikelnummer:
- 164-6987
- Tillv. art.nr:
- STPSC8065D
- Tillverkare / varumärke:
- STMicroelectronics
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 20,25 kr | 101,25 kr |
| 25 - 45 | 19,668 kr | 98,34 kr |
| 50 - 120 | 19,174 kr | 95,87 kr |
| 125 - 245 | 18,682 kr | 93,41 kr |
| 250 + | 18,234 kr | 91,17 kr |
*vägledande pris
- RS-artikelnummer:
- 164-6987
- Tillv. art.nr:
- STPSC8065D
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Peak Reverse Current Ir | 750μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Diameter | 3.75 mm | |
| Height | 15.75mm | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.65V | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Peak Reverse Current Ir 750μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Diameter 3.75 mm | ||
Height 15.75mm | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C
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