onsemi 1200 V 22.5 A Diode Schottky 3-Pin DPAK

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RS-artikelnummer:
178-4262
Tillv. art.nr:
FFSD08120A
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Product Type

Diode

Mount Type

Surface

Package Type

TO-252

Maximum Continuous Forward Current If

22.5A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

3

Peak Reverse Current Ir

400μA

Peak Non-Repetitive Forward Surge Current Ifsm

530A

Maximum Forward Voltage Vf

1.75V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

2.39mm

Width

6.22 mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK


Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C

High Surge Current Capacity

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery / No Forward Recovery

Applications

PFC

Industrial Power

Solar

EV Charger

UPS

Welding

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