onsemi 650 V 12 A Schottky Diode & Rectifier Mps 2-Pin TO-220-2 UJ3D06512TS
- RS-artikelnummer:
- 648-522
- Tillv. art.nr:
- UJ3D06512TS
- Tillverkare / varumärke:
- onsemi
Antal (1 påse med 2 enheter)*
108,64 kr
(exkl. moms)
135,80 kr
(inkl. moms)
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Enheter | Per enhet | Per Påse* |
|---|---|---|
| 2 + | 54,32 kr | 108,64 kr |
*vägledande pris
- RS-artikelnummer:
- 648-522
- Tillv. art.nr:
- UJ3D06512TS
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | Schottky Diode & Rectifier | |
| Mount Type | Through Hole | |
| Package Type | TO-220-2 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | UJ3 | |
| Diode Configuration | Single | |
| Rectifier Type | Mps | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 80μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 81A | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.37mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 10.16mm | |
| Width | 4.19 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type Schottky Diode & Rectifier | ||
Mount Type Through Hole | ||
Package Type TO-220-2 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series UJ3 | ||
Diode Configuration Single | ||
Rectifier Type Mps | ||
Pin Count 2 | ||
Peak Reverse Current Ir 80μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 81A | ||
Maximum Operating Temperature 175°C | ||
Height 15.37mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 10.16mm | ||
Width 4.19 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Easy paralleling
Extremely fast switching not dependent on temperature
No reverse or forward recovery
100% UIS tested
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