onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

RS-artikelnummer:: 688-1502
Tillv. art.nr:: MJ11015G
Tillverkare / varumärke:: onsemi

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

56 I lager för avsändande samma dag

Pris (ex. moms) Var (i ett paket med 2)

85,06 kr

(exkl. moms)

106,32 kr

(inkl. moms)

Enheter	Per unit	Per Pack*
2 - 8	85,06 kr	170,12 kr
10 - 98	73,195 kr	146,39 kr
100 - 198	60,775 kr	121,55 kr
200 - 498	57,335 kr	114,67 kr
500 +	53,455 kr	106,91 kr

RS-artikelnummer:: 688-1502
Tillv. art.nr:: MJ11015G
Tillverkare / varumärke:: onsemi

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

PNP Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity

Versions Available:
688-1502 - pack of 2
103-5055 - tray of 100

Specifikationer

Attribute	Value
Transistor Type	PNP
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	120 V
Maximum Emitter Base Voltage	5 V
Package Type	TO-204
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	200
Maximum Base Emitter Saturation Voltage	5 V
Maximum Collector Base Voltage	120 V
Maximum Collector Emitter Saturation Voltage	4 V
Length	39.37mm
Maximum Operating Temperature	+200 °C
Dimensions	39.37 x 26.67 x 8.51mm
Width	26.67mm
Minimum Operating Temperature	-55 °C
Height	8.51mm

RS-artikelnummer:: 688-1502
Tillv. art.nr:: MJ11015G
Tillverkare / varumärke:: onsemi