Infineon HEXFET Type P-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-220

RS-artikelnummer:: 919-4867
Tillv. art.nr:: IRF9Z34NPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-220

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RS-artikelnummer:: 919-4867
Tillv. art.nr:: IRF9Z34NPBF
Tillverkare / varumärke:: Infineon

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	68W
	Forward Voltage Vf	-1.6V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	4.69 mm
	Length	10.54mm
	Height	8.77mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 68W
	Forward Voltage Vf -1.6V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 4.69 mm
	Length 10.54mm
	Height 8.77mm
	Automotive Standard No

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COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 19A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRF9Z34NPBF

This P-channel MOSFET is designed for consistent performance across various electronic applications. With a continuous drain current rating of 19A and a drain-source voltage of 55V, it is suitable for automation and power management in modern electronic systems. Its robust thermal characteristics enable operation in challenging environments.

Features & Benefits

• High current capacity meets significant load requirements

• Maximum power dissipation of 68W improves durability

• Enhancement mode design supports efficient switching performance

• Low gate charge allows for quicker operation

• Effective thermal characteristics ensure stable performance at elevated temperatures

• TO-220AB package offers convenient integration into circuits

Applications

• Suitable for power supply circuits prioritising efficiency

• Perfect for motor control in automation systems

• Appropriate for high-frequency switching scenarios

• Employed in power management systems to enhance performance

What is the maximum temperature for this MOSFET?

It can operate at a maximum temperature of +175 °C while maintaining efficiency and reliability.

How does it handle gate-source voltage variations?

It accommodates a maximum gate-source voltage of ±20V, providing flexibility in circuit design.

What is the significance of its low drain-source resistance?

A maximum drain-source resistance of 100 mΩ increases power efficiency and reduces heat production.

Can it be used in high-frequency applications?

Yes, it supports fast switching due to its low gate charge of 35 nC at 10V.

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.