Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin TO-220AB IRFZ24NPBF

RS-artikelnummer:: 919-4851
Tillv. art.nr:: IRFZ24NPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin TO-220AB IRFZ24NPBF

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Price Var (i ett rör med 50)**

4,387 kr

(exkl. moms)

5,484 kr

(inkl. moms)

50 I lager för avsändande samma dag*

* Leveransdatumen kan ändras beroende på vald kvantitet och leveransadress.

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Enheter	Per enhet	Per Rør**
50 - 50	4,387 kr	219,35 kr
100 - 200	3,378 kr	168,90 kr
250 - 450	3,156 kr	157,80 kr
500 - 1200	2,941 kr	147,05 kr
1250 +	2,719 kr	135,95 kr

**vägledande pris

RS-artikelnummer:: 919-4851
Tillv. art.nr:: IRFZ24NPBF
Tillverkare / varumärke:: Infineon

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N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRFZ24NPBF

This MOSFET is designed to provide exceptional performance in a range of electronic applications. It serves as a key component in automation and control systems, enhancing both efficiency and reliability. Its capabilities are crucial for optimising system operations within the electrical and mechanical industries.

Features & Benefits

• High current handling capability of up to 17A for demanding applications
• Maximum operating voltage of 55V for diverse usage
• Low RDS(on) for minimised power loss during operation
• High thermal tolerance up to +175°C for consistent reliability
• Through-hole mounting for straightforward installation and maintenance
• Utilises enhancement mode for enhanced control in circuits

Applications

• Employed in power management systems to improve efficiency
• Suitable for motor control that require high current
• Utilised in automotive electronics for robust performance
• Ideal for HVAC systems where dependability is essential
• Applied in renewable energy systems for enhanced durability

What operating temperature range is suitable for optimal performance?

The product operates effectively from -55°C to +175°C, ensuring durability under various conditions.

How can I integrate this into my current circuit design?

It features a TO-220AB package type, simplifying integration into existing systems using standard PCB layouts.

What precautions should be taken during installation?

Ensure the mounting area is clean, and use appropriate thermal management to maximise performance and minimise heat-related issues.

Can it handle continuous high currents?

This product supports a continuous drain current of up to 17A, making it fit for high-demand applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	17 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	20 nC @ 10 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Transistor Material	Si
Height	8.77mm
Minimum Operating Temperature	-55 °C