Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB IRF540NPBF

RS-artikelnummer:: 919-4794
Tillv. art.nr:: IRF540NPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB IRF540NPBF

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Antal (1 rör med 50 enheter)*

469,55 kr

(exkl. moms)

586,95 kr

(inkl. moms)

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Enheter	Per enhet	Per Rør*
50 - 50	9,391 kr	469,55 kr
100 - 200	7,325 kr	366,25 kr
250 - 450	6,855 kr	342,75 kr
500 - 1200	6,387 kr	319,35 kr
1250 +	5,916 kr	295,80 kr

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RS-artikelnummer:: 919-4794
Tillv. art.nr:: IRF540NPBF
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	33 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	44 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	130 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Width	4.69mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	71 nC @ 10 V
	Length	10.54mm
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C
	Height	8.77mm

	Välj alla
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 33 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 44 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 130 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Width 4.69mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 71 nC @ 10 V
	Length 10.54mm
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C
	Height 8.77mm

Datasheet

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRF540NPBF

This MOSFET is designed to provide efficient switching capabilities and power management in various electronic applications. The device operates with a maximum continuous drain current of 33A and a maximum drain-source voltage of 100V. Housed in a TO-220AB package, this component is well-suited for both industrial and commercial uses, ensuring longevity and reliability under a range of environmental conditions.

Features & Benefits

• Utilises advanced processing for low on-resistance

• Supports fast switching speeds for efficient operation

• Fully avalanche rated for enhanced reliability under harsh conditions

• Offers a wide gate threshold voltage range for flexibility

• Designed for through-hole mounting for easy installation

Applications

• Ideal for high current switching in power supplies

• Used in automation and control systems

• Suitable for motor control and driving circuits

• Effective in inverters and converters for renewable energy systems

What is the significance of the low RDS(on) in this device?

A low RDS(on) improves efficiency by reducing power loss during operation, enabling better thermal management and enhancing overall performance in high-current applications.

How does the enhancement mode functionality influence its use?

The enhancement mode allows for low current operation until a specific gate voltage is applied, making it reliable for switching applications where precise control is essential.

What is the importance of the TO-220AB package design?

The TO-220AB package ensures effective heat dissipation, supporting high power dissipation levels while maintaining ease of mounting in various circuit configurations.

How does this MOSFET perform in extreme temperatures?

Operating effectively between -55°C to +175°C, it is designed to maintain performance in demanding environments, ensuring reliability even under challenging conditions.

What type of switching applications is this suitable for?

It is well-suited for powering loads in applications requiring rapid switching, such as motor drive systems, power converters, and various electronic control circuits.