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Vishay Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC SI9945BDY-T1-GE3

RS-artikelnummer:: 919-4189
Tillv. art.nr:: SI9945BDY-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC SI9945BDY-T1-GE3

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RS-artikelnummer:: 919-4189
Tillv. art.nr:: SI9945BDY-T1-GE3
Tillverkare / varumärke:: Vishay

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Välj alla	Attribut	Värde
	Brand	Vishay
	Channel Type	N
	Maximum Continuous Drain Current	5.3 A
	Maximum Drain Source Voltage	60 V
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	72 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	3.1 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	2
	Transistor Material	Si
	Width	4mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	13 nC @ 10 V
	Length	5mm
	Minimum Operating Temperature	-55 °C
	Height	1.5mm

	Välj alla
	Brand Vishay
	Channel Type N
	Maximum Continuous Drain Current 5.3 A
	Maximum Drain Source Voltage 60 V
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 72 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 3.1 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 2
	Transistor Material Si
	Width 4mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 13 nC @ 10 V
	Length 5mm
	Minimum Operating Temperature -55 °C
	Height 1.5mm

COO (Country of Origin):: TW

Vishay Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC SI9945BDY-T1-GE3

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