onsemi PowerTrench Type P-Channel MOSFET, 3.5 A, 20 V Enhancement, 8-Pin SOIC FDS9431A

RS-artikelnummer:: 917-5507
Tillv. art.nr:: FDS9431A
Tillverkare / varumärke:: onsemi

onsemi PowerTrench Type P-Channel MOSFET, 3.5 A, 20 V Enhancement, 8-Pin SOIC FDS9431A

Mängdrabatt möjlig

Antal (1 förpackning med 25 enheter)*

155,55 kr

(exkl. moms)

194,45 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Dessutom levereras 2 500 enhet(er) från den 29 december 2025

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Enheter	Per enhet	Per förpackning*
25 - 75	6,222 kr	155,55 kr
100 - 225	5,362 kr	134,05 kr
250 +	4,648 kr	116,20 kr

*vägledande pris

RS-artikelnummer:: 917-5507
Tillv. art.nr:: FDS9431A
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.5A
	Maximum Drain Source Voltage Vds	20V
	Series	PowerTrench
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	130mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	8 V
	Typical Gate Charge Qg @ Vgs	6nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	4 mm
	Height	1.5mm
	Length	5mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.5A
	Maximum Drain Source Voltage Vds 20V
	Series PowerTrench
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 130mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 8 V
	Typical Gate Charge Qg @ Vgs 6nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 4 mm
	Height 1.5mm
	Length 5mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.