IXYS Type N-Channel MOSFET, 100 A, 650 V Enhancement, 3-Pin TO-264 IXFK100N65X2
- RS-artikelnummer:
- 917-1429
- Distrelec artikelnummer:
- 302-53-341
- Tillv. art.nr:
- IXFK100N65X2
- Tillverkare / varumärke:
- IXYS
Mängdrabatt möjlig
Antal (1 enhet)*
208,21 kr
(exkl. moms)
260,26 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 193 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 1 | 208,21 kr |
| 2 - 4 | 197,57 kr |
| 5 - 9 | 187,38 kr |
| 10 + | 183,23 kr |
*vägledande pris
- RS-artikelnummer:
- 917-1429
- Distrelec artikelnummer:
- 302-53-341
- Tillv. art.nr:
- IXFK100N65X2
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.04kW | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.3mm | |
| Length | 20.3mm | |
| Standards/Approvals | No | |
| Width | 26.3 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.04kW | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Height 5.3mm | ||
Length 20.3mm | ||
Standards/Approvals No | ||
Width 26.3 mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
relaterade länkar
- IXYS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-264
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-264
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-264 IXTK120N65X2
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-264