Infineon HEXFET Type N-Channel MOSFET, 13.6 A, 30 V Enhancement, 8-Pin SOIC IRF7821TRPBF
- RS-artikelnummer:
- 915-4963
- Tillv. art.nr:
- IRF7821TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
174,72 kr
(exkl. moms)
218,40 kr
(inkl. moms)
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- 4 000 enhet(er) levereras från den 12 mars 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 80 | 8,736 kr | 174,72 kr |
| 100 - 380 | 6,664 kr | 133,28 kr |
| 400 - 980 | 6,334 kr | 126,68 kr |
| 1000 + | 4,598 kr | 91,96 kr |
*vägledande pris
- RS-artikelnummer:
- 915-4963
- Tillv. art.nr:
- IRF7821TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.3nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 155°C | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Length | 5mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.3nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 155°C | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Length 5mm | ||
Width 4 mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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