Infineon HEXFET N-Channel MOSFET, 162 A, 40 V, 3-Pin I2PAK IRF1404LPBF

Se alla MOSFETs
För närvarande inte tillgänglig
Vi vet inte om den här artikeln kommer tillbaka i lager, RS har för avsikt att ta bort den från vårt utbud snart.
RS-artikelnummer:
913-3815
Tillv. art.nr:
IRF1404LPBF
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

162 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

160 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

10.54mm

COO (Country of Origin):
MX

N-Channel Power MOSFET 40V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 162A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF1404LPBF


This MOSFET provides an efficient solution in various electronic applications, particularly where high performance is essential. Its advanced processing techniques make it suitable for automation and electronic control systems, contributing to modern power management devices.

Features & Benefits


• Delivers a continuous drain current of 162A for robust performance
• Withstands a maximum drain-source voltage of 40V for safe operation
• Exhibits low on-resistance (RDS(on)) of 4 mΩ, enhancing energy efficiency
• Utilises enhancement mode technology for improved switching performance
• Supports through-hole mounting, facilitating integration into existing designs

Applications


• Used in high current circuits for power regulation
• Suitable for power supply designs in industrial automation
• Applied in electric motor drives and control systems
• Ideal for DC-DC converters in renewable energy systems

What is the maximum power dissipation capability?


It can handle power dissipation up to 3.8W under specific conditions, ensuring optimal performance without overheating during operation.

Is it compatible with surface mount designs?


While primarily in the I2PAK package for through-hole applications, it can be integrated into other industrial designs requiring robust components.

How should it be mounted for optimal performance?


Follow proper through-hole mounting techniques to ensure secure soldering, preventing thermal and mechanical failures during operation.

What are the implications of exceeding the specified limits?


Exceeding the continuous drain current or voltage limits may cause thermal overload or permanent damage to the device, affecting overall system reliability.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

relaterade länkar