Infineon HEXFET N-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB AUIRFZ44N

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RS-artikelnummer:
912-8646
Tillv. art.nr:
AUIRFZ44N
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

65 nC @ 10 V

Length

10.66mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Width

4.82mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

16.51mm

COO (Country of Origin):
MX

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Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


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