Infineon HEXFET Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 912-8598
- Tillv. art.nr:
- AUIRF540Z
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
1 034,30 kr
(exkl. moms)
1 292,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 450 enhet(er), redo att levereras
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 20,686 kr | 1 034,30 kr |
| 100 - 200 | 16,755 kr | 837,75 kr |
| 250 - 450 | 16,012 kr | 800,60 kr |
| 500 - 950 | 15,597 kr | 779,85 kr |
| 1000 + | 15,225 kr | 761,25 kr |
*vägledande pris
- RS-artikelnummer:
- 912-8598
- Tillv. art.nr:
- AUIRF540Z
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 26.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 92W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.66mm | |
| Standards/Approvals | No | |
| Width | 4.82 mm | |
| Height | 16.51mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 26.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 92W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 10.66mm | ||
Standards/Approvals No | ||
Width 4.82 mm | ||
Height 16.51mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MX
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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