N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-220SIS Toshiba TK39A60W,S4VX(M

RS-artikelnummer:: 896-2366
Tillv. art.nr:: TK39A60W,S4VX(M
Tillverkare / varumärke:: Toshiba

N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-220SIS Toshiba TK39A60W,S4VX(M

155 I lager för avsändande samma dag

Pris (ex. moms) Varje

48,46 kr

(exkl. moms)

60,58 kr

(inkl. moms)

Enheter	Per enhet
1 - 4	48,46 kr
5 - 9	35,49 kr
10 - 24	34,60 kr
25 - 49	33,49 kr
50 +	33,05 kr

RS-artikelnummer:: 896-2366
Tillv. art.nr:: TK39A60W,S4VX(M
Tillverkare / varumärke:: Toshiba

TK39A60W, Silicon N-Channel DTMOS MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	39 A
Maximum Drain Source Voltage	600 V
Series	TK
Package Type	TO-220SIS
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	50 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	10mm
Typical Gate Charge @ Vgs	110 nC @ 10 V
Width	4.5mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Height	15mm

N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-220SIS Toshiba TK39A60W,S4VX(M

MOSFET N-Channel, TK3x Series, Toshiba