Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 892-2330
- Tillv. art.nr:
- IPP039N04LGXKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
128,63 kr
(exkl. moms)
160,79 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 10 enhet(er) levereras från den 02 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 12,863 kr | 128,63 kr |
| 50 - 90 | 12,219 kr | 122,19 kr |
| 100 - 240 | 11,973 kr | 119,73 kr |
| 250 - 490 | 11,189 kr | 111,89 kr |
| 500 + | 10,416 kr | 104,16 kr |
*vägledande pris
- RS-artikelnummer:
- 892-2330
- Tillv. art.nr:
- IPP039N04LGXKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS 3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 94W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Forward Voltage Vf | 0.92V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Height | 15.95mm | |
| Width | 4.572 mm | |
| Distrelec Product Id | 304-44-436 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS 3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 94W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Forward Voltage Vf 0.92V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Height 15.95mm | ||
Width 4.572 mm | ||
Distrelec Product Id 304-44-436 | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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