Infineon OptiMOS™ 3 N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 FP IPA093N06N3GXKSA1

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RS-artikelnummer:
892-2309
Tillv. art.nr:
IPA093N06N3GXKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220 FP

Series

OptiMOS™ 3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.85mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

10.65mm

Minimum Operating Temperature

-55 °C

Height

16.15mm

Forward Diode Voltage

1.2V

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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