Infineon CoolMOS™ CE N-Channel MOSFET, 14.1 A, 550 V, 3-Pin TO-220 IPP50R380CEXKSA1

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RS-artikelnummer:
892-2267
Tillv. art.nr:
IPP50R380CEXKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

14.1 A

Maximum Drain Source Voltage

550 V

Series

CoolMOS™ CE

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

98 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

24.8 nC @ 10 V

Length

10.36mm

Number of Elements per Chip

1

Width

4.57mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

15.95mm

Forward Diode Voltage

0.85V

Infineon CoolMOS™ CE Power MOSFET


Infineon CoolMOS™ CE Series MOSFET, 14.1A Maximum Continuous Drain Current, 98W Maximum Power Dissipation - IPP50R380CEXKSA1


This MOSFET is tailored for high-voltage power applications, focusing on efficiency and dependability. Incorporating CoolMOS™ technology, it improves switching performance while minimising losses, making it advantageous for various industrial applications and significantly enhancing energy management.

Features & Benefits


• Low Rds(on) reduces conduction losses, which contributes to efficiency
• High continuous drain current rating accommodates rigorous applications
• Simplifies integration into existing systems due to easy drivability
• Flexible gate threshold voltage broadens compatibility with different circuits
• Sturdy package design ensures durability in challenging environments

Applications


• Suitable for power factor correction (PFC) stages
• Works well in hard-switching PWM stages
• Applicable in resonant switching for LCD and PDP televisions
• Effective in lighting for efficient power management
• Utilised in power supplies for PCs and automation systems

What is the optimal gate-source voltage for operation?


The MOSFET functions effectively with a maximum gate-source voltage of ±30 V, optimising control across various applications.

How does this component perform in thermal environments?


With a maximum power dissipation of 98 W, it operates efficiently between -55°C and +150°C, making it suitable for a range of thermal conditions.

Can this component handle pulsed currents?


It can manage pulse currents up to 32.4A, supporting transient conditions competently without compromising performance.

What advantages does the superjunction technology provide?


Superjunction technology lowers both switching and conduction losses, enhancing overall efficiency and extending device lifespan in applications.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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