IXYS Type N-Channel MOSFET, 550 A, 55 V Enhancement, 24-Pin SMPD MMIX1T550N055T2
- RS-artikelnummer:
- 875-2500
- Tillv. art.nr:
- MMIX1T550N055T2
- Tillverkare / varumärke:
- IXYS
Mängdrabatt möjlig
Antal (1 enhet)*
521,43 kr
(exkl. moms)
651,79 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 20 juli 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 1 | 521,43 kr |
| 2 - 4 | 510,94 kr |
| 5 - 9 | 495,38 kr |
| 10 - 14 | 490,11 kr |
| 15 + | 484,96 kr |
*vägledande pris
- RS-artikelnummer:
- 875-2500
- Tillv. art.nr:
- MMIX1T550N055T2
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 550A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SMPD | |
| Mount Type | Surface | |
| Pin Count | 24 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 595nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 830W | |
| Maximum Operating Temperature | 175°C | |
| Length | 25.25mm | |
| Height | 5.7mm | |
| Width | 23.25 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 550A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SMPD | ||
Mount Type Surface | ||
Pin Count 24 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 595nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 830W | ||
Maximum Operating Temperature 175°C | ||
Length 25.25mm | ||
Height 5.7mm | ||
Width 23.25 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
relaterade länkar
- IXYS Type N-Channel MOSFET 55 V Enhancement, 24-Pin SMPD
- IXYS Type N-Channel MOSFET 40 V Enhancement, 24-Pin SMPD
- IXYS Type N-Channel MOSFET 75 V Enhancement, 24-Pin SMPD
- IXYS Type N-Channel MOSFET 40 V Enhancement, 24-Pin SMPD MMIX1T600N04T2
- IXYS Type N-Channel MOSFET 75 V Enhancement, 24-Pin SMPD MMIX1F520N075T2
- IXYS Single GigaMOS 132 A 24-Pin SMPD MMIX1F180N25T
- IXYS GigaMOS 132 A 24-Pin SMPD MMIX1F180N25T
- IXYS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247