onsemi PowerTrench Type N-Channel MOSFET, 5.6 A, 100 V Enhancement, 4-Pin SOT-223 FDT1600N10ALZ
- RS-artikelnummer:
- 864-8732
- Tillv. art.nr:
- FDT1600N10ALZ
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
177,175 kr
(exkl. moms)
221,475 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 250 enhet(er) är redo att levereras
- Dessutom levereras 1 000 enhet(er) från den 23 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 75 | 7,087 kr | 177,18 kr |
| 100 - 225 | 6,106 kr | 152,65 kr |
| 250 + | 5,295 kr | 132,38 kr |
*vägledande pris
- RS-artikelnummer:
- 864-8732
- Tillv. art.nr:
- FDT1600N10ALZ
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 375mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 10.42W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.7mm | |
| Standards/Approvals | No | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 375mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 10.42W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Height 1.7mm | ||
Standards/Approvals No | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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