onsemi PowerTrench Type N-Channel MOSFET, 6.6 A, 100 V Enhancement, 4-Pin SOT-223 FDT86102LZ
- RS-artikelnummer:
- 759-9194
- Tillv. art.nr:
- FDT86102LZ
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
24,64 kr
(exkl. moms)
30,80 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 3 934 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 12,32 kr | 24,64 kr |
| 20 - 198 | 10,57 kr | 21,14 kr |
| 200 - 998 | 9,18 kr | 18,36 kr |
| 1000 - 1998 | 8,07 kr | 16,14 kr |
| 2000 + | 7,345 kr | 14,69 kr |
*vägledande pris
- RS-artikelnummer:
- 759-9194
- Tillv. art.nr:
- FDT86102LZ
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | PowerTrench | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 46mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.2W | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.7 mm | |
| Standards/Approvals | No | |
| Length | 3.7mm | |
| Height | 1.7mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-45-653 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series PowerTrench | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 46mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.2W | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Width 6.7 mm | ||
Standards/Approvals No | ||
Length 3.7mm | ||
Height 1.7mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-45-653 | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
relaterade länkar
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 4-Pin SOT-223
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 FDT86113LZ
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 FDT86106LZ
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 4-Pin SOT-223 FDT86244