onsemi SuperFET II Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-220 FCPF190N60

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37,72 kr

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  • Dessutom levereras 4 enhet(er) från den 19 januari 2026
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RS-artikelnummer:
864-7913
Tillv. art.nr:
FCPF190N60
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

600V

Series

SuperFET II

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

57nC

Maximum Power Dissipation Pd

39W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Length

10.36mm

Width

4.9 mm

Standards/Approvals

No

Height

16.07mm

Automotive Standard

No

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor


Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.

Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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