Infineon OptiMOS N-Channel MOSFET, 80 A, 55 V, 3-Pin TO-220 IPP80N06S207AKSA1

RS-artikelnummer:: 857-6987
Tillv. art.nr:: IPP80N06S207AKSA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS N-Channel MOSFET, 80 A, 55 V, 3-Pin TO-220 IPP80N06S207AKSA1

Mängdrabatt möjlig

Antal (1 rör med 500 enheter)*

7 294,50 kr

(exkl. moms)

9 118,00 kr

(inkl. moms)

Lagerinformation är för närvarande otillgänglig

Enheter	Per enhet	Per Rør*
500 - 2000	14,589 kr	7 294,50 kr
2500 - 4500	14,065 kr	7 032,50 kr
5000 +	13,882 kr	6 941,00 kr

*vägledande pris

RS-artikelnummer:: 857-6987
Tillv. art.nr:: IPP80N06S207AKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	55 V
	Series	OptiMOS
	Package Type	TO-220
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	6.6 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	250 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	10mm
	Typical Gate Charge @ Vgs	86 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Width	4.4mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Height	15.65mm
	Minimum Operating Temperature	-55 °C

	Välj alla
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 55 V
	Series OptiMOS
	Package Type TO-220
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 6.6 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 250 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 10mm
	Typical Gate Charge @ Vgs 86 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Width 4.4mm
	Transistor Material Si
	Number of Elements per Chip 1
	Height 15.65mm
	Minimum Operating Temperature -55 °C

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS N-Channel MOSFET, 80 A, 55 V, 3-Pin TO-220 IPP80N06S207AKSA1

Infineon OptiMOS™ Power MOSFET Family

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