Infineon OptiMOS T2 N-Channel MOSFET, 90 A, 40 V, 3-Pin I2PAK IPI90N04S402AKSA1

RS-artikelnummer:: 857-6811
Tillv. art.nr:: IPI90N04S402AKSA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS T2 N-Channel MOSFET, 90 A, 40 V, 3-Pin I2PAK IPI90N04S402AKSA1

Mängdrabatt möjlig

Antal (1 rör med 500 enheter)*

5 843,00 kr

(exkl. moms)

7 304,00 kr

(inkl. moms)

Lagerinformation är för närvarande otillgänglig

Enheter	Per enhet	Per Rør*
500 - 2000	11,686 kr	5 843,00 kr
2500 - 4500	11,386 kr	5 693,00 kr
5000 +	11,102 kr	5 551,00 kr

*vägledande pris

RS-artikelnummer:: 857-6811
Tillv. art.nr:: IPI90N04S402AKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

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Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	90 A
	Maximum Drain Source Voltage	40 V
	Series	OptiMOS T2
	Package Type	I2PAK (TO-262)
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	2.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	150 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Width	4.4mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	91 nC @ 10 V
	Length	10mm
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	9.25mm

	Välj alla
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 90 A
	Maximum Drain Source Voltage 40 V
	Series OptiMOS T2
	Package Type I2PAK (TO-262)
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 2.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 150 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Width 4.4mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 91 nC @ 10 V
	Length 10mm
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 9.25mm

RoHS-status: Undantagen

Infineon OptiMOS™ T2 Power MOSFETs

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS T2 N-Channel MOSFET, 90 A, 40 V, 3-Pin I2PAK IPI90N04S402AKSA1

Infineon OptiMOS™ T2 Power MOSFETs

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