Infineon CoolMOS C6 N-Channel MOSFET, 20 A, 700 V, 3-Pin I2PAK IPI65R190C6XKSA1

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8 850,50 kr

(exkl. moms)

11 063,00 kr

(inkl. moms)

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RS-artikelnummer:
857-6713
Tillv. art.nr:
IPI65R190C6XKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

700 V

Series

CoolMOS C6

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Width

4.57mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

73 nC @ 10 V

Length

10.36mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

9.45mm

Infineon CoolMOS™C6/C7 Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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